| PART |
Description |
Maker |
| BUK436-800B BUK436W-800A BUK436W-800B BUK436-800A |
DIODE, SCHOTTKY, SM, 100V.3A, B310
RECTIFIER SCHOTTKY SINGLE 2A 80V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL
PowerMOS transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| IRFD9113 IRFD9110 |
(IRFD9110) P Channel Power MOSFET
-0.6A and -0.7A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs
|
Harris Corporation
|
| 83CNQ080ASM 83CNQ080A 83CNQ100ASM 83CNQ100ASL 83CN |
80V 80A Schottky Common Cathode Diode in a D61-8-SL package
100V 80A Schottky Common Cathode Diode in a D61-8-SL package
80V 80A Schottky Common Cathode Diode in a D61-8-SM package
100V 80A Schottky Common Cathode Diode in a D61-8-SM package
SCHOTTKY RECTIFIER
From old datasheet system
|
IRF[International Rectifier]
|
| SB20-18 |
Schottky Barrier Diode (Twin Type Cathode Common) 80V, 2A Rectifier
80V/ 2A Rectifier
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| 2SB596 2SB596O 2SB596Y |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 4A I(C) | TO-220AB 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 4A条一（c）| TO - 220AB现有
POWER TRANSISTORS(4.0A,80V,30W)
|
Mospec Semiconductor, Corp.
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| 203CNQ100R 203CNQ080 203CNQ080R 203CNQ100 203CNQ10 |
SCHOTTKY RECTIFIER
100V 200A Schottky Common Anode Diode in a TO-244AB Non-Isolated package
100V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
80V 200A Schottky Common Anode Diode in a TO-244AB Non-Isolated package
80V 200A Schottky Common Cathode Diode in a TO-244AB Non-Isolated package
SCHOTTKYRECTIFIER
SCHOTTKY RECTIFIER 肖特基整流器
100 A, 100 V, SILICON, RECTIFIER DIODE, TO-244AB
|
IRF[International Rectifier]
InternationalRectifier
International Rectifier, Corp.
|
| 2SD2309A 2SC3800 2SC3800Q 2SC3800R 2SD2011A 2SD230 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 4A I(C) | SIP
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 50MA I(C) | TO-92
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|叩| 100V的五（巴西）总裁|甲一（c）|园区
TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | 4A I(C) | SIP 晶体管|晶体管|达林顿|叩| 80V的五（巴西）总裁| 4A条一（c）|园区
TRANSISTOR | BJT | DARLINGTON | PNP | 100V V(BR)CEO | 2A I(C) | SIP 晶体管|晶体管|达林顿|进步党| 100V的五（巴西）总裁|甲一（c）|园区
TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 2A I(C) | TO-92
|
Avago Technologies, Ltd.
Atmel, Corp.
HIROSE ELECTRIC Co., Ltd.
|
| FDD3510H |
Dual N & P-Channel PowerTrench MOSFET N-Channel: 80V, 13.9A, 80mOHM P-Channel: -80V, -9.4A, 190mOHM
|
Fairchild Semiconductor
|
| CDSV3-202N-G CDSV3-202P-G CDSV3-202N-G12 |
Switching Diodes Array, V-RRM=80V, V-R=80V, P-D=200mW, I-F=300mA
Small Signal Switching Diodes
|
Comchip Technology
|
| NTMD6601NR2G NTMD6601N |
80V 2.2A DUAL N-CHANNEL SO8
NFET S08D 80V
Power MOSFET 80 V, 2.2 A, Dual N-Channel, SO-8
|
ON Semiconductor
|
